| نویسندگان | A Rostami- K Abbasian- N Gorji |
|---|---|
| نشریه | International Journal on Technical and Physical Problems of Engineering (IJTPE) |
| شماره صفحات | 106-109 |
| نوع مقاله | Full Paper |
| تاریخ انتشار | 2011-06-01 |
| رتبه نشریه | ISI |
| نوع نشریه | چاپی |
| کشور محل چاپ | ایران |
چکیده مقاله
In this paper, we have calculated the efficiency and I-V characteristic of a Quantum Dot (QD) Solar Cell (SC) based on multi-stacked different-sized InGaN QDs on a GaN substrate. In order to engineer the confinement states of QDs, we have inserted different QDs in the i-region of a p-i-n structure which includes different layers. This leads to Rainbow SCs.